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DLP3V3DTZ
DUAL UNIDIRECTIONAL AND SINGLE BIDIRECTIONAL TVS General Description
NEW PRODUCT
*
This Transient Voltage Suppressor (TVS) diode is designed for dual uni-directional or single bi-directional protection for data lines, components or circuits from damage due to electrostatic discharge (ESD), cable discharge events(CDE) and lightning (see IPPM below). It offers high ESD capability, low reverse leakage, low junction capacitance and low clamping voltage over range of temperature. They are suitable for computers, communication systems, hand held portables, high density PC boards and peripherals.
Features
* * * * * * * * * * * * * *
372 Watts Peak Pulse Power (tp=8/20 mS) AEC-Q101 (Human Body Model- 8kV, Machine Model-400V) and 25 KV(air)/ 8 KV(contact) as per IEC61000-4-2(ESD) Dual Unidirectional and Single Bidirectional Configuration Lead Free By Design/ROHS Compliant (Note 2) "Green" Device (Note 3) Surface Mount Package Suited for Automated Assembly
D1 D2 D1 D2
GND 3
N/C 3
Mechanical Data
Case: SOT-23 Case Material: "Green Molding" Compound (Molded Plastic). UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Fig. 1 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Last Page Ordering Information: See Page 6 Weight: 0.008 grams (approximate) @ TA = 25C unless otherwise specified Symbol Unidirectional Bidirectional Unidirectional Bidirectional Ppp Pd IPP IFSM Vpp Value 372 145 300 40 15 10.5 25 8 Unit W mW A A kV
1 Line1_in 2 Line2_in 1 Line_in 2 GND
A. Unidirectional Protection for two Lines
B. Bidirectional Protection for a single Line
Fig. 1: Schematic and Pin Configuration
Absolute Maximum Ratings
Peak Pulse Power (tp=8/20mS) Continuous Power Dissipation (Note1) Maximum Peak Pulse Current (tp=8/20 mS)
Characteristic
Forward Surge Current (8.3 ms half sine-wave) ESD per IEC 6100--4-2(air) ESD per IEC 6100--4-2(contact)
Thermal Characteristics
Characteristic Operating and Storage Junction Temperature Range Thermal Resistance, Junction to Ambient Air (Note1)
Notes:
Symbol Tj, Tstg RqJA
Value -55 to +150 420
Unit
C
C/W
1. Device mounted on FR-4 PCB, 1 inchx 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2 . No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
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DLP3V3DTZ
a Diodes Incorporated
Electrical Characteristics @ TA = 25C unless otherwise specified
NEW PRODUCT
Characteristic Rated Reverse Standoff Voltage Breakdown Voltage Forward Voltage Reverse Leakage Current @VRWM Unidirectional Bidirectional Clamping Voltage (Note 4) Unidirectional Bidirectional Unidirectional Junction Capacitance Bidirectional Unidirectional Bidirectional Dynamic Resistance @ Ipp (large signal) Dynamic Impedance (small signal) Temperature Coefficient
Notes:
Symbol VRWM VBR VF IR
Min 3/4 4.5 3/4 3/4 3/4 3/4
Typ 3/4 3/4 0.8 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 0.115 380 47 -1.07
Max 3.3 3/4 3/4 0.095 6.0 7.0 9.3
Unit V V V mA V
Test Condition Pin 1 to 3 or Pin 2 to 3 Pin 1 to 3 or Pin 2 to 3 @ IT = 1mA Pin 3 to 1 or Pin 3 to 2, IF = 10mA Pin 1 to 3 or Pin 2 to 3 Ipp = 1A (Pin 1 to 3 or Pin 2 to 3 Ipp=1A (Pin 1 to 2 or Pin 2 to 1, Pin 3 = nc) Ipp = 40A (Pin 1 to 3 or Pin 2 to 3) Ipp=15A (Pin 1 to 2 or Pin 2 to 1, Pin 3 = nc) VR = 0V, f =1 MHz VR = 3.3V, f=1 MHz Ipp= 40A,Vc = 9.3V,VBR = 4.5V (Pin 1 to 3 or 2 to 3) IR=1 mA, f= 1 KHz (Pin 1 to 3 or 2 to 3) IR = 5 mA, f = 1 KHz (Pin 1 to 3 or 2 to 3) IR=5 mA (Pin 1 to 3 or 2 to 3)
Vc
3/4 3/4 3/4 3/4 3/4 3/4
V 9.666 420 210 230 115 3/4 3/4 3/4 3/4 pF pF W W W mV/C
Cj
Unidirectional
Rd
3/4 3/4
Unidirectional Unidirectional
ZZt 3/4 qvz 3/4
4. Clamping voltage value is based on a tp = 8/20 mS peak pulse current (Ipp) waveform.
Typical Characteristics @ Tamb = 25C unless otherwise specified
1000
372 W, 8/20 mS waveform
TA = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM
% IPP, PEAK PULSE CURRENT
Ppp, PEAK PULSE POWER (W)
100
Peak Value Ipp
100
Half Value Ipp/2
50
e -kt
td
10 10 100 1000 10000
td, PULSE DECAY TIME (mS) Fig. 2 Unidirectional Non-Repetitive Peak Pulse Power vs. Pulse Duration or Pulse Width
0
8/20 Waveform as defined by R.E.A.
0
20
40
60
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DLP3V3DTZ
100
12
Unidirectional Bidirectional
NEW PRODUCT
% OF RATED POWER OR Ipp
10
75
Vc, CLAMPING VOLTAGE (V)
8
50
Average Power
6
4
25
2
0
0
0
25
125 TA, AMBIENT TEMPERATURE (C) 100
Fig. 4 Power Derating Curve
50
75
150
0
5
10
15
20
25
30
35
40
45
Ipp, PEAK PULSE CURRENT (A) Fig. 5 Clamping Voltage vs. Peak Pulse Current
Single TVS Diode Characteristics:
400 380 360
f = 1MHz
10000 1000 100 10 1
IR(uA) Ave @ -55C
Cj, CAPACITANCE (pF)
340 320 300 280 260 240
0.1 0.01
IR(uA) Ave @ 25C IR(uA) Ave @ 85C IR(uA) Ave @ 150C
220 200 0 0.5 1 1.5 2 2.5 3 3.5 VR, REVERSE VOLTAGE (V) Fig. 6 Junction Capacitance vs. Reverse Voltage
0.001 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VR, REVERSE VOLTAGE (V) Fig. 7 Leakage Current vs. Reverse Voltage
10000 1000
60
IR, LEAKAGE CURRENT (mA)
Ave VF(V) @ -55C Ave VF(V) @ 25C
IF, FORWARD CURRENT (mA)
Ave VF(V) @ 85C Ave VF(V) @ 150C
50
VZ(V) Ave @ -55C VZ(V) Ave @ 25C VZ(V) Ave @ 85C
100 10
40
VZ(V) Ave @ 150C
30
1
20
0.1
10
0.01 0 0.2 0.4 0.6 0.8 1 1.2 VF, FORWARD VOLTAGE (V) Fig. 8 Typical Forward Characteristic
0 3 3.5 4 4.5 5 5.5 6 VR, REVERSE VOLTAGE (V) Fig. 9 Typical Reverse Characteristic
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DLP3V3DTZ
0.0015
ZZT, DYNAMIC IMPEDANCE (Ohm)
1000
NEW PRODUCT
0.001 0.0005 0 -0.0005 -0.001 -0.0015 -0.002 -0.0025 0 10 20 30 40 50 60 IR, REVERSE CURRENT (mA) Fig. 10 Temperature Coefficient vs. Reverse Current
100
10
1
0.1 0 5 10 15 20 25 30 35 40 IR, REVERSE CURRENT (mA) Fig. 11 Dynamic Impedance vs. Reverse Current (Small Signal)
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DLP3V3DTZ
Circuit Diagram
NEW PRODUCT
Power/Data(3.3v) Line2 to be Protected Power/Data(3.3v) Line1 to be Protected
Power/Data(3.3v) Line to be Protected
D1
Unidirectional TVS Potection for Two Lines
D1 D2 D2
Bidirectional TVS Potection for a Single Line
Note: D1, D2 - TVS Zener Diode
Note: D1, D2 - TVS Zener Diode
Fig. 12
Typical Application Circuit
Unidirectional Protection for Two 3.3V Dataline
U1 D+ 1 1 3 2 4 DU2 Line 1_in 2 3 Line 2_in 1 DLP3V3DTZ 2 IC 3 4 Vin
External Device
out1 out2
Output Connector
Diodes Inc.
Fig. 13
Bidirectional Protection for 3.3v Power Supply Bus
3.3v Vcc Supply Bus
U1 Vin Line_in 1 In1 3 2 DLP3V3DTZ In2
U2 Out1 1 2 3 6 Out2 5 4 IC
Diodes Inc.
Fig. 14
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DLP3V3DTZ
Application Information
NEW PRODUCT
Protection from ESD It is a fact that ESD is the primary cause of failure in electronic systems. Transient Voltage Suppressors(TVS) are an ideal choice for using as ESD protection devices. They have the capability to clamp the incoming transient to such a low level that the damage to the circuit beyond the device is prevented. Surface mount TVS are the best choice for minimum lead inductance. DLP3V3DTZ is designed to be used as two uni-directional or single bi-directional protection device in a circuit.They serve as parallel protection elements, connected between the signal line to ground. It will present a high impedance to the protected line up to 3.3 volts. As the transient rises above the operating voltage which is the breakdown voltage of the device, the TVS diode becomes a low impedance path diverting the transient current to ground. Dynamic Resistance to Calculate Clamping Voltage At times PCB designers need to calculate the clamping voltage VCL. For this reason the dynamic resistance in addition to the typical parameters is listed here. The voltage across the protected circuitry can be calculated as following: VCL = VBR + Rd * Ipp (also VCL= Vz + Rd*Ipp....for accuracy) e.g. If Ipp=1A, VCL = Vz + Rd*Ipp = 5.6 V (from fig. 9) + 1A*0.115 Ohm=(5.6+0.115)V=5.715 V (close to actual measured Value) Where Ipp is the peak current through the TVS Diode. The short duration of the ESD has led us to a widely adapted classical test wave, 8/20 mS and 10/1000 mS surges. Since Zzt remains stable for a surge duration less than 20mS, the 2.5 mS rectangular surge is sufficient for use. Peak Pulse Power Calculation The following relation fits well for pulse width less than 10 mS. Ppp = K (td)-0.5 e.g. Ppp = 372 watts for pulse width(td) of 20 mS, then 372 watts = K (20)-0.5 and K = 372/(20)-0.5 = 372*O20=1663.63 Now, Ppp when td= 50 mS: Ppp=1663.63 (50)-0.5 = 1663.63/(50)0.5=1663.63/(O50) = 235.27 watts (close to measured value see fig. 2) Tips for Circuit Board Layout Correct layout of the circuit board plays a critical role in preventing ESD induced failures. Some of useful guidelines are given below: - Trace length between the TVS diode and the circuit or line to be protected should be kept to a minimum. - Always place a TVS diode as close as possible to the input terminals or connectors if one is required. - Try to avoid or minimize power and ground loops or any other conductive loops. - Try to use ground planes whenever feasible rather than a simple ground trace. - The path to ground for the ESD transient return should be as short as possible.
Ordering Information (Note 5)
Device DLP3V3DTZ-7
Notes:
Marking Code A07
Packaging SOT-23
Shipping 3000/Tape & Reel
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
A07
A07 = Product Type Marking Code YM = Date Code Marking Y = Year e.g., T = 2006 M = Month e.g., 1 = Janurary
Date Code Key Year Code Month Code Jan 1 Feb 2
Fig. 15 2005 S March 3 Apr 4 May 5 Jun 6 Jul 7 2006 T Aug 8 2007 U Sep 9 2008 V Oct O Nov N 2009 W Dec D
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DLP3V3DTZ
Mechanical Details
NEW PRODUCT
SOT-23 Dim
A
Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0
Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8
A B C
B C
D E G H
TOP VIEW
E
D G H K J D L M
J K L M a
Fig. 16
All Dimensions in mm
Suggested Pad Layout: (Based on IPC-SM-782)
Y
Fig. 17 Dimensions Z G
C
SOT-23* 3.4 0.7 0.9 1.4 2.0 0.9
Z
G
X Y C E
X
E
All Dimensions in mm
* Typical values in mm
Fig. 17
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30669 Rev. 2 - 2
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DLP3V3DTZ

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